SK hynix Develops Next-Generation HBM3E DRAM for AI Applications

SK hynix Inc. has announced the successful development of HBM3E, the highest-specification DRAM for AI applications currently available. The company is currently undergoing customer evaluation of samples. HBM3E is an extended version of HBM3, delivering the best specifications in the world. SK hynix plans to begin mass production of HBM3E in the first half of next year, solidifying its leadership in the AI memory market.

The latest product meets the industry's highest standards of speed, capacity, heat dissipation, and user-friendliness. HBM3E can process data up to 1.15 terabytes per second, equivalent to processing over 230 Full-HD movies of 5 GB each in a second. It also offers a 10% improvement in heat dissipation through the use of Advanced Mass Reflow Molded Underfill technology. Additionally, the product is backward compatible, allowing it to be adopted onto systems designed for HBM3 without modification.

"We have a long history of working with SK hynix on High Bandwidth Memory for leading-edge accelerated computing solutions," said Ian Buck, Vice President of Hyperscale and HPC Computing at NVIDIA. "We look forward to continuing our collaboration with HBM3E to deliver the next generation of AI computing."

Sungsoo Ryu, Head of DRAM Product Planning at SK hynix, stated that the development of HBM3E strengthens the company's market leadership and enhances the completeness of its HBM product lineup. With increased supply of high-value HBM products, SK hynix aims for a fast business turnaround.